Samsung Eyes 30% Mobile HBM Bandwidth Gain With FOWLP for On-Device AI

4 articles · Updated · Wccftech · May 17

Samsung is developing high-bandwidth memory for smartphones and tablets, aiming to bring server-class DRAM performance to on-device AI workloads in mobile devices.
The plan combines Fan-Out Wafer Level Packaging with Vertical Copper Post Stack, letting Samsung fit stacked DRAM into tighter mobile designs while addressing heat, space and power limits.
Samsung has reportedly raised VCS copper-pillar aspect ratios to 15:1-20:1 from 3-5:1, and FOWLP could add more I/O terminals for about a 30% bandwidth increase.
The approach still faces durability and cost hurdles: pillars under 10 micrometers can bend or break, and elevated mobile DRAM prices may delay broad adoption.
No launch timing was given, but the report points to possible use in Exynos 2800 or 2900, as rivals including Apple and Huawei also explore mobile HBM.

With HBM prices soaring and supply scarce, can Samsung make this server-grade super-memory affordable enough for your next smartphone?

Huawei's new AI chip already has custom HBM. Is Samsung already falling behind in the race for on-device AI supremacy?